The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Feb. 24, 2012
Applicants:
Luigi Colombo, Dallas, TX (US);
James J. Chambers, Austin, TX (US);
Mark R. Visokay, Dallas, TX (US);
Inventors:
Luigi Colombo, Dallas, TX (US);
James J. Chambers, Austin, TX (US);
Mark R. Visokay, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention provides a method for manufacturing a semiconductor device that comprises placing a metallic gate layer over a gate dielectric layer where the metallic gate layer has a crystallographic orientation, and re-orienting the crystallographic orientation of the metallic gate layer by subjecting the metallic gate layer to a hydrogen anneal.
Colombo, Luigi. (2013). Semiconductor device fabricated using a metal microstructure control process (U.S. Patent No. 8575014). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8575014
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile