The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2014
Filed:
Apr. 15, 2013
Texas Instruments Incorporated, Dallas, TX (US);
James Joseph Chambers, Dallas, TX (US);
Hiroaki Niimi, Dallas, TX (US);
Brian Keith Kirkpatrick, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An integrated circuit (IC) includes a substrate having a top semiconductor surface including at least one MOS device including a source and a drain region spaced apart to define a channel region. A SiON gate dielectric layer that has a plurality of different N concentration portions is formed on the top semiconductor surface. A gate electrode is on the SiON layer. The plurality of different N concentration portions include (i) a bottom portion extending to the semiconductor interface having an average N concentration of <2 atomic %, (ii) a bulk portion having an average N concentration >10 atomic %, and (iii) a top portion on the bulk portion extending to a gate electrode interface having an average N concentration that is ≧2 atomic % less than a peak N concentration of the bulk portion.