The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Aug. 15, 2013
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
James Joseph Chambers, Dallas, TX (US);
Hiroaki Niimi, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CMOS device having an NMOS transistor with a metal gate electrode comprising a mid-gap metal with a low work function/high oxygen affinity cap and a PMOS transistor with a metal gate electrode comprising a mid gap metal with a high work function/low oxygen affinity cap and method of forming.
Chambers, James. (2014). Method for dual work function metal gate cmos with selective capping (U.S. Patent No. 8658489). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8658489
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile