The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Sep. 30, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Mahalingam Nandakumar, Richardson, TX (US);

Yuguo Wang, Plano, TX (US);

Haowen Bu, Wylie, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/283 (2006.01); H01L 21/70 (2006.01); H01L 23/525 (2006.01); H10D 1/47 (2025.01); H10D 1/68 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01L 21/283 (2013.01); H01L 21/707 (2013.01); H01L 23/5223 (2013.01); H01L 23/5256 (2013.01); H10D 1/474 (2025.01); H10D 84/811 (2025.01); H10D 1/692 (2025.01);
Abstract

A method and an electronic device that includes an isolation structure having a dielectric material on or in a semiconductor surface layer, and a passive circuit component having a metal silicide structure on a side of the isolation structure, there the metal silicide structure includes a metal silicide portion and a dielectric portion, the dielectric portion of the metal silicide structure including one of silicon nitride, silicon oxide, silicon carbide, silicon carbon nitride, and silicon oxynitride. The method includes forming a dielectric material of the isolation structure on or in the semiconductor surface layer, forming a silicon-rich dielectric layer on a side of the isolation structure, and siliciding the silicon-rich dielectric layer to form the metal silicide structure on the side of the isolation structure.


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