Haowen Bu

This inventor holds 73 USPTO granted patents and 7 published patent applications and 2 EPO patents, primarily in Semiconductor Capacitors (CPC class H01L). Top assignee: Texas Instruments Corporation. Active years: 2004-2025.

USPTO Granted Patents = 73 (Patent Applications = 7)

% Patents Active = 90.4

EPO Patents = 2

Average Co-Inventor Count = 3.5

ph-index = 11

Forward Citations = 662(Granted Patents)

Forward Citations (Not Self Cited) = 638(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

73 out of 29,835

Texas Instruments Corporation

patents

Years Active: 2004-2025

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Areas of Expertise:

Capacitor

Ferroelectric Layers

Oxide Growth

Precision Capacitors

CMOS Transistors

Silicon-Rich Dielectric

Stress Memorization

Defect Reduction

Metal Silicide

Laminated Stress

Implantation Treatment

73 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12500117 - Shallow trench isolation structure with nitride pullback by implantation treatment (2025-12-16),

2. 12494425 - Integration scheme to build resistor, capacitor, efuse using silicon-rich dielectric layer as a base dielectric (2025-12-09),

3. 11710764 - IC with 3D metal-insulator-metal capacitor (2023-07-25),

4. 11670671 - Precision capacitor (2023-06-06),

5. 11569342 - Precision capacitor (2023-01-31),

6. 10964778 - Precision capacitor (2021-03-30),

7. 10644098 - Precision capacitor (2020-05-05),

8. 10157915 - Capacitor with improved voltage coefficients (2018-12-18),

9. 10068771 - System and method for mitigating oxide growth in a gate dielectric (2018-09-04),

10. 9892927 - System and method for mitigating oxide growth in a gate dielectric (2018-02-13),

11. 9779946 - System and method for mitigating oxide growth in a gate dielectric (2017-10-03),

12. 9583336 - Process to enable ferroelectric layers on large area substrates (2017-02-28),

13. 9576804 - System and method for mitigating oxide growth in a gate dielectric (2017-02-21),

14. 9396951 - System and method for mitigating oxide growth in a gate dielectric (2016-07-19),

15. 9368355 - System and method for mitigating oxide growth in a gate dielectric (2016-06-14),

Title: Haowen Bu: Pioneering Inventor from Plano, TX

Introduction: Haowen Bu is a distinguished inventor based in Plano, Texas, known for his groundbreaking contributions to various technological fields.

Latest Patents: Haowen Bu holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his versatility and innovative spirit.

Career Highlights: With over two decades of experience in the industry, Haowen Bu has worked with leading tech companies, spearheading research and development projects that have led to significant advancements in the field.

Collaborations: Throughout his career, Haowen Bu has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and excellence in all his projects.

Conclusion: Haowen Bu's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and researchers worldwide.