The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Feb. 18, 2016
Texas Instruments Incorporated, Dallas, TX (US);
Bhaskar Srinivasan, Plano, TX (US);
Asad Mahmood Haider, Plano, TX (US);
Brian E. Goodlin, Plano, TX (US);
Haowen Bu, Plano, TX (US);
Roger Charles McDermott, Garland, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A microelectronic device with a ferroelectric layer is formed using an MOCVD tool. A substrate is disposed on a susceptor heated to 600° C. to 650° C. A first carrier gas is flowed into a manifold to combine with a plurality of metal organic precursors. The first carrier gas, the metal organic precursors, and a second carrier gas, are flowed through a vaporizer into a chamber of the MOCVD tool, over the substrate. A ratio of a flow rate of the first carrier gas to a flow rate of the metal organic precursors is 250 sccm/milliliter/minute to 500 sccm/milliliter/minute. A ratio of a flow rate of the second carrier gas to a flow rate of the metal organic precursors is 700 sccm/milliliter/minute to 1500 sccm/milliliter/minute. An oxidizing gas is flowed into the chamber over the substrate. The metal organic precursors and the oxidizing gas react to form the ferroelectric layer.