The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Mar. 16, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); C23C 16/455 (2006.01); H01L 21/677 (2006.01); H01G 4/018 (2006.01); H03M 1/12 (2006.01);
U.S. Cl.
CPC ...
H01L 28/56 (2013.01); C23C 16/455 (2013.01); H01G 4/018 (2013.01); H01L 21/67739 (2013.01); H03M 1/12 (2013.01);
Abstract
In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.