The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Jan. 06, 2023
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventor:

Mahalingam Nandakumar, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 23/525 (2006.01); H01L 27/06 (2006.01); H01L 29/76 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 23/5258 (2013.01); H01L 27/0629 (2013.01);
Abstract

An integrated circuit includes a polysilicon resistor having a plurality of segments, including first, second and third segments, the second segment located between and running about parallel to the first and third segments. A first header connects the first and second segments, and a second header connects the second and third segments. A first metal silicide layer located over the first header extends over the first and second segments toward the second header. A second metal silicide layer located over the second header extends over the second and third segments toward the first header. A dielectric layer is located over and contacts the first, second and third segments between the first and second metal silicide layers.


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