The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Sep. 19, 2011
Applicants:
Hiroaki Niimi, Dallas, TX (US);
Reima T. Laaksonen, Dallas, TX (US);
Inventors:
Hiroaki Niimi, Dallas, TX (US);
Reima T. Laaksonen, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method for manufacturing a gate dielectric () that includes providing a nitrided dielectric layer () over a substrate (). The nitrided dielectric layer () has a nonuniform concentration of nitrogen in a bulk thereof. The nitrided dielectric layer () is exposed to oxygen radicals (), resulting in a reduction of the non-uniformity.