The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2010

Filed:

Apr. 13, 2006
Applicants:

Hiroaki Niimi, Dallas, TX (US);

Reima Tapani Laaksonen, Dallas, TX (US);

Inventors:

Hiroaki Niimi, Dallas, TX (US);

Reima Tapani Laaksonen, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming a silicon oxide masking layer over a substrate in a first active region and a second active region of a semiconductor device, patterning the silicon oxide masking layer to expose the substrate in the first active region. The method further includes forming a layer of dielectric material over the substrate in the first active region, the patterned silicon oxide masking layer protecting the substrate from the layer of dielectric material in the second active region.


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