The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
May. 05, 2011
Applicants:
Hiroaki Niimi, Dallas, TX (US);
Jarvis B. Jacobs, Murphy, TX (US);
Reima Tapani Laaksonen, Dallas, TX (US);
Inventors:
Hiroaki Niimi, Dallas, TX (US);
Jarvis B. Jacobs, Murphy, TX (US);
Reima Tapani Laaksonen, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28158 (2013.01); H01L 21/28202 (2013.01);
Abstract
The present invention provides a method for forming a semiconductor device, as well as a semiconductor device. The method for manufacturing a semiconductor device, among others, includes providing a gate structure () over a substrate (), the gate structure () including a gate electrode () located over a nitrided gate dielectric (), and forming a nitrided region () over a sidewall of the nitrided gate dielectric ().