Method for forming ultra-thin low leakage multiple gate devices using a masking layer over the semiconductor substrate

Abstract

The present invention provides a method for manufacturing a semiconductor device having multiple gate dielectric thickness layers. The method, in one embodiment, includes forming a masking layer over a semiconductor substrate in a first active region and a second active region of a semiconductor device, patterning the masking layer to expose the semiconductor substrate in the first active region, and subjecting exposed portions of the semiconductor substrate to a nitrogen containing plasma, thereby forming a first layer of gate dielectric material over the semiconductor substrate in the first active region. The method, in that embodiment, may further include incorporating oxygen into the first layer of gate dielectric material located in the first active region, and then removing the patterned masking layer, and forming a second layer of gate dielectric material over the first layer of gate dielectric material in the first active region and over the semiconductor substrate in the second active region, thereby resulting in a first greater thickness gate dielectric in the first active region and a second lesser thickness gate dielectric in the second active region.