The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2005
Filed:
Oct. 21, 2002
Applicants:
Keeho Kim, McKinney, TX (US);
Jarvis B. Jacobs, Murphy, TX (US);
Reima T. Laaksonen, Dallas, TX (US);
Inventors:
Keeho Kim, McKinney, TX (US);
Jarvis B. Jacobs, Murphy, TX (US);
Reima T. Laaksonen, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G03F009/00 ;
U.S. Cl.
CPC ...
Abstract
A method of providing critical dimension (CD) gate control during photolithography is achieved by scanning a trial wafer from a batch by an exposure tool and then measuring the gate width to determine shot zones for bi-shot (BSE) exposure. The time delay based on shot or exposure order is determined for each BSE zone. The shot or exposure dose for the other wafers from the same or similar batch is then determined on the bi-shot exposure and the shot order.