The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Sep. 12, 2005
Ajith Varghese, McKinney, TX (US);
Reima T. Laaksonen, Dallas, TX (US);
Terrence J. Riley, Richardson, TX (US);
Ajith Varghese, McKinney, TX (US);
Reima T. Laaksonen, Dallas, TX (US);
Terrence J. Riley, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
The present invention, in one aspect, provides a method of manufacturing a microelectronics devicethat includes depositing a first gate dielectric layerover a substrate, subjecting the first gate dielectric layerto a first nitridation process, forming a second gate dielectric layerover the substrateand having a thickness less than a thickness of the first gate dielectric layer, and subjecting the first and second gate dielectric layersto a second nitridation process, wherein the first and second nitridation processes are different. The present invention also provides a microelectronics devicefabricated in accordance with the method.