IDiyas

For the Inventor, By the Inventor

McKinney, TX, United States of America

Ajith Varghese

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 77(Granted Patents)


Location History:

  • Austin, TX (US) (2010)
  • McKinney, TX (US) (2005 - 2015)

Company Filing History:

goldMedal15 out of 29,232 
 
Texas Instruments Corporation
 patents

Years Active: 2005-2015

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15 patents (USPTO):Explore Patents
1. 9054056 - Transistor performance using a two-step damage anneal (2015-06-09),
2. 9029251 - Transistor performance using a two-step damage anneal (2015-05-12),
3. 8828855 - Transistor performance using a two-step damage anneal (2014-09-09),
4. 8119470 - Mitigation of gate to contact capacitance in CMOS flow (2012-02-21),
5. 7855111 - Border region defect reduction in hybrid orientation technology (HOT) direct silicon bonded (DSB) substrates (2010-12-21),
6. 7838370 - Highly selective liners for semiconductor fabrication (2010-11-23),
7. 7723173 - Low temperature polysilicon oxide process for high-K dielectric/metal gate stack (2010-05-25),
8. 7696021 - Semiconductor device manufactured using a non-contact implant metrology (2010-04-13),
9. 7682988 - Thermal treatment of nitrided oxide to improve negative bias thermal instability (2010-03-23),
10. 7514308 - CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers (2009-04-07),
11. 7435651 - Method to obtain uniform nitrogen profile in gate dielectrics (2008-10-14),
12. 7396728 - Methods of improving drive currents by employing strain inducing STI liners (2008-07-08),
13. 7384861 - Strain modulation employing process techniques for CMOS technologies (2008-06-10),
14. 7227201 - CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers (2007-06-05),
15. 6924239 - Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using 'spike' radical oxidation (2005-08-02),
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