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For the Inventor, By the Inventor

McKinney, TX, United States of America

Ajith Varghese

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.1

ph-index = 3

Forward Citations = 77(Granted Patents)


Location History:

  • Austin, TX (US) (2010)
  • McKinney, TX (US) (2005 - 2015)

Company Filing History:

goldMedal15 out of 29,263 
 
Texas Instruments Corporation
 patents

Years Active: 2005-2015

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15 patents (USPTO):Explore Patents
1. 9054056 - Transistor performance using a two-step damage anneal (2015-06-09),
2. 9029251 - Transistor performance using a two-step damage anneal (2015-05-12),
3. 8828855 - Transistor performance using a two-step damage anneal (2014-09-09),
4. 8119470 - Mitigation of gate to contact capacitance in CMOS flow (2012-02-21),
5. 7855111 - Border region defect reduction in hybrid orientation technology (HOT) direct silicon bonded (DSB) substrates (2010-12-21),
6. 7838370 - Highly selective liners for semiconductor fabrication (2010-11-23),
7. 7723173 - Low temperature polysilicon oxide process for high-K dielectric/metal gate stack (2010-05-25),
8. 7696021 - Semiconductor device manufactured using a non-contact implant metrology (2010-04-13),
9. 7682988 - Thermal treatment of nitrided oxide to improve negative bias thermal instability (2010-03-23),
10. 7514308 - CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers (2009-04-07),
11. 7435651 - Method to obtain uniform nitrogen profile in gate dielectrics (2008-10-14),
12. 7396728 - Methods of improving drive currents by employing strain inducing STI liners (2008-07-08),
13. 7384861 - Strain modulation employing process techniques for CMOS technologies (2008-06-10),
14. 7227201 - CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers (2007-06-05),
15. 6924239 - Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using 'spike' radical oxidation (2005-08-02),

Title: The Innovative Contributions of Ajith Varghese

Introduction

Ajith Varghese is a prominent inventor based in McKinney, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on enhancing transistor performance, which is crucial for the advancement of electronic devices.

Latest Patents

One of Ajith Varghese's latest patents involves a two-step thermal treatment method aimed at improving transistor performance. This method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is executed on the semiconductor device, followed by a second thermal treatment procedure that is consecutively performed to reduce damage produced by the ion implantation. This innovative approach has the potential to significantly enhance the reliability and efficiency of semiconductor devices.

Career Highlights

Ajith Varghese is currently employed at Texas Instruments Corporation, a leading company in the semiconductor industry. His role at Texas Instruments allows him to apply his expertise in semiconductor technology and contribute to the development of cutting-edge electronic solutions.

Collaborations

Throughout his career, Ajith has collaborated with several talented individuals, including Narendra Singh Mehta and Husam N Alshareef. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Ajith Varghese's contributions to semiconductor technology through his patents and work at Texas Instruments Corporation highlight his role as a key innovator in the field. His dedication to improving transistor performance is paving the way for advancements in electronic devices.

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