The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Aug. 31, 2004
Husam N. Alshareef, Austin, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Ajith Varghese, McKinney, TX (US);
Cathy A. Chancellor, Wylie, TX (US);
Anand Krishnan, Farmers Branch, TX (US);
Malcolm J. Bevan, Dallas, TX (US);
Husam N. Alshareef, Austin, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Ajith Varghese, McKinney, TX (US);
Cathy A. Chancellor, Wylie, TX (US);
Anand Krishnan, Farmers Branch, TX (US);
Malcolm J. Bevan, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of reducing threshold voltage shift of a MOSFET transistor resulting after temperature and voltage stress, and an integrated circuit device fabricated according to the method. The method includes the steps of forming a nitrided dielectric layer on a semiconductor substrate, and subjecting the nitrided dielectric layer to an anneal at low pressure.