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For the Inventor, By the Inventor

Irving, TX, United States of America

Rajesh B Khamankar

USPTO Granted Patents = 43


Average Co-Inventor Count = 4.0

ph-index = 11

Forward Citations = 554(Granted Patents)


Location History:

  • Irving, TX (US) (2000 - 2003)
  • Coppell, TX (US) (2003 - 2014)

Company Filing History:

goldMedal43 out of 29,232 
 
Texas Instruments Corporation
 patents

Years Active: 2000-2014

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43 patents (USPTO):
1. 8809141 - High performance CMOS transistors using PMD liner stress (2014-08-19),
2. 8471307 - In-situ carbon doped e-SiGeCB stack for MOS transistor (2013-06-25),
3. 8114784 - Laminated stress overlayer using In-situ multiple plasma treatments for transistor improvement (2012-02-14),
4. 8084787 - PMD liner nitride films and fabrication methods for improved NMOS performance (2011-12-27),
5. 8084312 - Nitrogen based implants for defect reduction in strained silicon (2011-12-27),
6. 8021990 - Gate structure and method (2011-09-20),
7. 7847401 - Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps (2010-12-07),
8. 7682988 - Thermal treatment of nitrided oxide to improve negative bias thermal instability (2010-03-23),
9. 7670892 - Nitrogen based implants for defect reduction in strained silicon (2010-03-02),
10. 7601575 - Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance (2009-10-13),
11. 7560792 - Reliable high voltage gate dielectric layers using a dual nitridation process (2009-07-14),
12. 7553718 - Methods, systems and structures for forming semiconductor structures incorporating high-temperature processing steps (2009-06-30),
13. 7535066 - Gate structure and method (2009-05-19),
14. 7514308 - CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers (2009-04-07),
15. 7402524 - Post high voltage gate oxide pattern high-vacuum outgas surface treatment (2008-07-22),

Title: Rajesh B Khamankar: Innovator in CMOS Transistor Technology

Introduction: Rajesh B Khamankar is an accomplished inventor based in Irving, TX, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 43 patents, Khamankar has been at the forefront of innovations in high-performance CMOS transistors, which are essential for modern electronic devices.

Latest Patents: Among his latest patents, Khamankar has developed advanced technologies such as high-performance CMOS transistors utilizing PMD liner stress. This innovation involves the formation of a silicon nitride layer over the transistor gate and source/drain regions, which comprises a first tensile stress and a high hydrogen concentration. After thermal annealing, the tensile stress increases, and the hydrogen concentration exceeds 12 atomic percent, greatly enhancing transistor performance. Another notable patent is for an integrated circuit containing a PMOS transistor that features a three-layer PSD stack made of Si-Ge, carbon, and boron. This intricate design optimizes the characteristics of the PMOS transistor and is a testament to Khamankar's ingenuity in semiconductor fabrication processes.

Career Highlights: Rajesh Khamankar has built a stellar reputation in the industry through his work at Texas Instruments Corporation. His extensive research and development efforts have not only advanced the company’s technological capabilities but also contributed to the broader field of microelectronics. His role at Texas Instruments underscores his importance as an influential figure in semiconductor innovation.

Collaborations: Throughout his career, Khamankar has collaborated with prominent colleagues in the field, including Haowen Bu and Douglas Ticknor Grider. These partnerships have facilitated great advancements in their shared projects and innovations, enabling them to push the boundaries of what is possible in CMOS technology.

Conclusion: Rajesh B Khamankar's contributions to the field of semiconductor technology through his numerous patents exemplify the spirit of innovation that drives the industry forward. His expertise and collaborative efforts continue to influence the development of high-performance electronic components, further establishing his legacy as a leading inventor in his field.

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