The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2010
Filed:
May. 07, 2009
Applicants:
P R Chidambaram, Richardson, TX (US);
Haowen Bu, Plano, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Douglas T Grider, McKinney, TX (US);
Inventors:
P R Chidambaram, Richardson, TX (US);
Haowen Bu, Plano, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Douglas T Grider, McKinney, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method () of forming semiconductor structures () including high-temperature processing steps (step), incorporates the use of a high-temperature nitride-oxide mask () over protected regions () of the device (). The invention has application in many different embodiments, including but not limited to, the formation of recess, strained device regions ().