Company Filing History:
Years Active: 2002-2011
Title: P R Chidambaram: Innovator in Semiconductor Technology
Introduction
P R Chidambaram is a notable inventor based in Richardson, TX (US), recognized for his contributions to semiconductor technology. He holds a total of 6 patents, showcasing his innovative approach to enhancing transistor performance and reliability.
Latest Patents
One of his latest patents focuses on nitrogen-based implants for defect reduction in strained silicon. This invention involves fabricating a transistor on a semiconductor substrate, where the yield strength or elasticity of the substrate is enhanced. A strain-inducing layer is formed over the transistor to apply strain, which alters the operating characteristics and enhances carrier mobility. This improvement allows for reduced transistor dimensions while maintaining desired operational performance. However, the high strain and temperature during fabrication can lead to plastic deformation. To address this, Chidambaram's method incorporates nitrogen into the substrate, particularly in the source/drain extension regions, to enhance yield strength and mitigate deformation.
Another significant patent involves methods, systems, and structures for forming semiconductor structures that incorporate high-temperature processing steps. This method utilizes a high-temperature nitride-oxide mask over protected regions of the device. The invention has broad applications, including the formation of recess and strained device regions.
Career Highlights
Chidambaram is currently associated with Texas Instruments Corporation, where he continues to innovate in the field of semiconductor technology. His work has significantly impacted the efficiency and performance of electronic devices.
Collaborations
He has collaborated with notable colleagues, including Srinivasan Chakravarthi and Douglas Ticknor Grider, contributing to advancements in semiconductor research and development.
Conclusion
P R Chidambaram's innovative work in semiconductor technology, particularly in enhancing transistor performance through nitrogen-based implants and high-temperature processing methods, underscores his importance in the field. His contributions continue to shape the future of electronic devices.