Fabrication of abrupt ultra-shallow junctions using angled pai and fluorine implant

Abstract

The present invention is directed to a method of forming a PMOS transistor within a semiconductor substrate, and comprises forming a gate over an n-type portion of the semiconductor substrate, thereby defining a source region and a drain region in the semiconductor substrate with a channel region therebetween. The source and drain region of the semiconductor substrate are then subjected to an angled amorphization implant, wherein the angled amorphization implant amorphizes the semiconductor substrate thereat and in portions of the channel region near a lateral edge of the gate, thereby defining an amorphized source extension region and drain extension region, respectively. The method continue with an implantation of the source region and the drain region with a lightly doped p-type source/drain implant, followed by an anneal to repair damage in the semiconductor substrate due to the pre-amorphizing implant and the lightly doped source/drain implantation. The amorphized source and drain extension regions advantageously reduce a lateral diffusion thereof during the anneal.