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Amitava Chatterjee

This inventor holds 104 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in ESD Protection Circuits (CPC class H01L2-1336). Top assignee: Texas Instruments Corporation. Active years: 1990-2024.

USPTO Granted Patents = 104 (Patent Applications = 1)

% Patents Active = 99.0

EPO Patents = 2 (Patent Applications = 2)

Average Co-Inventor Count = 2.5

ph-index = 20

Forward Citations = 1,106(Granted Patents)

Forward Citations (Not Self Cited) = 1,067(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Dallas, TX (US) (1991)
Garland, TX (US) (1995)
Richardson, TX (US) (1990 - 2009)
Plano, TX (US) (1993 - 2024)

Company Filing History:

104 out of 29,835

Texas Instruments Corporation

patents

Years Active: 1990-2024

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Areas of Expertise:

ESD Protection

CMOS Structures

MOSFET Performance

Bipolar Junction Transistor

Gate Dielectrics

Voltage Coefficient

Data Retention

Leakage Reduction

Isolation Schemes

Transistor Design

Analog Capacitors

Integrated Circuits

104 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12057443 - ESD protection circuit with isolated SCR for negative voltage operation (2024-08-06),

2. 11302688 - ESD protection circuit with isolated SCR for negative voltage operation (2022-04-12),

3. 11049852 - ESD protection circuit with isolated SCR for negative voltage operation (2021-06-29),

4. 10608110 - I-shaped gate electrode for improved sub-threshold MOSFET performance (2020-03-31),

5. 10128145 - Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells (2018-11-13),

6. 10083951 - ESD protection circuit with isolated SCR for negative voltage operation (2018-09-25),

7. 9865507 - Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure (2018-01-09),

8. 9768296 - I-shaped gate electrode for improved sub-threshold MOSFET performance (2017-09-19),

9. 9721849 - High performance isolated vertical bipolar junction transistor and method for forming in a CMOS integrated circuit (2017-08-01),

10. 9583596 - Drain extended CMOS with counter-doped drain extension (2017-02-28),

11. 9577094 - Low cost demos transistor with improved CHC immunity (2017-02-21),

12. 9461035 - High performance isolated vertical bipolar junction transistor and method for forming in a CMOS integrated circuit (2016-10-04),

13. 9431302 - Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure (2016-08-30),

14. 9412668 - Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure (2016-08-09),

15. 9397164 - Deep collector vertical bipolar transistor with enhanced gain (2016-07-19),

Title: Innovator Spotlight: Amitava Chatterjee - Pioneering ESD Protection Circuits in Plano, TX

Introduction:

Amitava Chatterjee, a prolific inventor based in Plano, Texas, has made a significant impact in the field of semiconductor technology with over 100 patents to his name. His groundbreaking work on ESD protection circuits has revolutionized the industry and cemented his reputation as a leading innovator in the field.

Latest Patents:

One of Chatterjee's latest patents showcases his expertise in designing ESD protection circuits with isolated SCR for negative voltage operation. This semiconductor controlled rectifier features a complex structure that enhances the efficiency and reliability of integrated circuits, demonstrating Chatterjee's mastery of cutting-edge semiconductor technologies.

Career Highlights:

With a career spanning several years, Chatterjee has made meaningful contributions to various renowned companies in the industry. Notably, he has played a key role at Texas Instruments Corporation and Texas Instruments Incorporated, where his innovative ideas have led to significant advancements in semiconductor design and ESD protection mechanisms.

Collaborations:

Throughout his career, Chatterjee has collaborated with esteemed colleagues such as Alwin J Tsao and Seetharaman Sridhar. Together, they have worked on pioneering projects that have pushed the boundaries of semiconductor technology and paved the way for new innovations in the field.

Conclusion:

Amitava Chatterjee's remarkable achievements in the realm of semiconductor technology stand as a testament to his brilliance and dedication to pushing the boundaries of innovation. His groundbreaking work on ESD protection circuits continues to shape the industry, setting new standards for excellence in semiconductor design.

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