The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Mar. 04, 2022
Texas Instruments Incorporated, Dallas, TX (US);
Akram A. Salman, Plano, TX (US);
Farzan Farbiz, Dallas, TX (US);
Amitava Chatterjee, Plano, TX (US);
Xiaoju Wu, Dallas, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A semiconductor controlled rectifier (FIG.A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region () having a first conductivity type (N) and a first heavily doped region () having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region () having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region () having the first conductivity type is formed within the second lightly doped region. A buried layer () having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region () having the second conductivity type is formed between the second lightly doped region and the third heavily doped region. A fourth lightly doped region () having the second conductivity type is formed between the second lightly doped region and the third heavily doped region and electrically connected to the second and third lightly doped regions.