The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2017
Filed:
Sep. 04, 2015
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Amitava Chatterjee, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 31/08 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 21/3105 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7833 (2013.01); H01L 21/28123 (2013.01); H01L 21/31051 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/4238 (2013.01); H01L 29/42356 (2013.01); H01L 29/42376 (2013.01); H01L 29/495 (2013.01); H01L 29/4916 (2013.01); H01L 29/4966 (2013.01); H01L 29/66568 (2013.01); H01L 21/823828 (2013.01);
Abstract
Metal-oxide-semiconductor (MOS) transistors with reduced subthreshold conduction, and methods of fabricating the same. Transistor gate structures are fabricated in these transistors of a shape and dimension as to overlap onto the active region from the interface between isolation dielectric structures and the transistor active areas. Minimum channel length conduction is therefore not available at the isolation-to-active interface, but rather the channel length along that interface is substantially lengthened, reducing off-state conduction.