The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2018
Filed:
Jul. 07, 2016
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/265 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 27/10 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/26513 (2013.01); H01L 21/823814 (2013.01); H01L 21/823857 (2013.01); H01L 21/823864 (2013.01); H01L 27/092 (2013.01); H01L 27/0928 (2013.01); H01L 29/105 (2013.01); H01L 29/42364 (2013.01);
Abstract
Impurity atoms of a first type are implanted through a gate and a thin gate dielectric into a channel region that has substantially only the first type of impurity atoms at a middle point of the channel region to increase the average dopant concentration of the first type of impurity atoms in the channel region to adjust the threshold voltage of a transistor.