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Plano, TX, United States of America

Freidoon Mehrad

USPTO Granted Patents = 52

Average Co-Inventor Count = 2.6

ph-index = 10

Forward Citations = 464(Granted Patents)

Forward Citations (Not Self Cited) = 461(Oct 12, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal52 out of 29,232 
 
Texas Instruments Corporation
 patents

Years Active: 1996-2015

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52 patents (USPTO):
1. 9035399 - Structure for facilitating the simultaneous silicidation of a polysilicon gate and source/drain of a semiconductor device (2015-05-19),
2. 8574980 - Method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device (2013-11-05),
3. 8372703 - Gate dielectric first replacement gate processes and integrated circuits therefrom (2013-02-12),
4. 8273645 - Method to attain low defectivity fully silicided gates (2012-09-25),
5. 7960280 - Process method to fully salicide (FUSI) both N-poly and P-poly on a CMOS flow (2011-06-14),
6. 7943456 - Selective wet etch process for CMOS ICs having embedded strain inducing regions and integrated circuits therefrom (2011-05-17),
7. 7910422 - Reducing gate CD bias in CMOS processing (2011-03-22),
8. 7892906 - Method for forming CMOS transistors having FUSI gate electrodes and targeted work functions (2011-02-22),
9. 7838356 - Gate dielectric first replacement gate processes and integrated circuits therefrom (2010-11-23),
10. 7763540 - Method of forming a silicided gate utilizing a CMP stack (2010-07-27),
11. 7727842 - Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device (2010-06-01),
12. 7670952 - Method of manufacturing metal silicide contacts (2010-03-02),
13. 7601575 - Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance (2009-10-13),
14. 7585738 - Method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device (2009-09-08),
15. 7504339 - Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits (2009-03-17),

Sure, thank you for providing the details about inventor Freidoon Mehrad. Here is the article based on the information you shared:

Title: The Innovative Mind of Freidoon Mehrad: Pioneering Advancements in Semiconductor Technology

Introduction:

Freidoon Mehrad, a prolific inventor based in Plano, Texas, is renowned for his outstanding contributions to the field of semiconductor technology. With an impressive portfolio of 52 patents, Mehrad continues to push the boundaries of innovation in his role at Texas Instruments Corporation.

Latest Patents:

Mehrad's recent patents showcase his expertise in semiconductor device fabrication. One of his groundbreaking innovations includes a method for the simultaneous silicidation of a polysilicon gate and source/drain of a semiconductor device. This process involves forming a gate stack over a semiconductor substrate, performing chemical mechanical polishing, and conducting a simultaneous silicidation process to enhance device performance.

Another notable patent by Mehrad involves the formation of fully silicided NMOS and PMOS semiconductor devices with independent polysilicon gate thicknesses. This method allows for the customization of gate thickness, enabling the efficient fabrication of advanced semiconductor devices.

Career Highlights:

Freidoon Mehrad's illustrious career at Texas Instruments Corporation has been marked by a relentless pursuit of innovation. His expertise in semiconductor device design and fabrication has positioned him as a key figure in the semiconductor industry. Mehrad's patents not only demonstrate his technical prowess but also underscore his commitment to advancing semiconductor technology.

Collaborations:

Throughout his career, Freidoon Mehrad has collaborated with esteemed professionals in the field of semiconductor technology. Among his notable coworkers are Zhihao Chen and Shaofeng Yu, who have worked closely with Mehrad on various projects. This spirit of collaboration and knowledge-sharing has been instrumental in driving forward innovations in semiconductor technology.

Conclusion:

In conclusion, Freidoon Mehrad stands as a visionary inventor whose work has significantly impacted the semiconductor industry. With a portfolio of 52 patents and a track record of pioneering advancements in semiconductor device fabrication, Mehrad continues to inspire the next generation of innovators. His contributions reflect a deep understanding of semiconductor technology and a relentless dedication to pushing the boundaries of innovation.

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