The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Apr. 27, 2007
Freidoon Mehrad, Plano, TX (US);
Shaofeng Yu, Plano, TX (US);
Steven A. Vitale, Murphy, TX (US);
Joe G. Tran, Flower Mound, TX (US);
Freidoon Mehrad, Plano, TX (US);
Shaofeng Yu, Plano, TX (US);
Steven A. Vitale, Murphy, TX (US);
Joe G. Tran, Flower Mound, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a semiconductor substrate (the gate stack comprising a first polysilicon layer, a first nitride layer, and a second polysilicon layer), forming a second nitride layer over an active region in the semiconductor substrate adjacent to the gate stack, performing a chemical mechanical polishing that stops on the first nitride layer and on the second nitride layer, removing the first nitride layer and the second nitride layer, and performing a simultaneous silicidation of the first polysilicon layer and the active region.