The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Apr. 27, 2007
Applicants:
Shaofeng Yu, Plano, TX (US);
Freidoon Mehrad, Plano, TX (US);
Jiong-ping LU, Richardson, TX (US);
Inventors:
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a substrate (the gate stack comprising a polysilicon layer and a blocking layer), and performing an ion implantation into an active region of the substrate adjacent to the gate stack (the blocking layer substantially blocks the ion implantation from the polysilicon layer).