The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Mar. 23, 2007
Yaw S. Obeng, Frisco, TX (US);
Juanita Deloach, Plano, TX (US);
Freidoon Mehrad, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of manufacturing a semiconductor device, comprising forming a metal silicide gate electrode on a semiconductor substrate surface. The method also comprises exposing the metal silicide gate electrode and the substrate surface to a cleaning process. The cleaning process includes a dry plasma etch using an anhydrous fluoride-containing feed gas and a thermal sublimation configured to leave the metal silicide gate electrode substantially unaltered. The method also comprises depositing a metal layer on source and drain regions of the substrate surface and annealing the metal layer and the source and drain regions of the substrate surface to form metal silicide source and drain contacts.