The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Apr. 27, 2007
Freidoon Mehrad, Plano, TX (US);
Shaofeng Yu, Plano, TX (US);
Steven A. Vitale, Murphy, TX (US);
Craig H. Huffman, Krugerville, TX (US);
Freidoon Mehrad, Plano, TX (US);
Shaofeng Yu, Plano, TX (US);
Steven A. Vitale, Murphy, TX (US);
Craig H. Huffman, Krugerville, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of forming fully silicided NMOS and PMOS semiconductor devices having independent polysilicon gate thicknesses, and related device. At least some of the illustrative embodiments are methods comprising forming an N-type gate over a semiconductor substrate (the N-type gate having a first thickness), forming a P-type gate over the semiconductor substrate (the P-type gate having a second thickness different than the first thickness), and performing a simultaneous silicidation of the N-type gate and the P-type gate.