The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2018
Filed:
Mar. 20, 2014
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Kamel Benaissa, Garland, TX (US);
Amitava Chatterjee, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/761 (2006.01); H01L 21/8234 (2006.01); H01L 29/8605 (2006.01); H01L 29/66 (2006.01); H01L 27/08 (2006.01); H01L 21/266 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/761 (2013.01); H01L 21/266 (2013.01); H01L 21/823493 (2013.01); H01L 27/0802 (2013.01); H01L 29/66166 (2013.01); H01L 29/8605 (2013.01); H01L 27/0629 (2013.01);
Abstract
Integrated circuits and manufacturing methods are presented for creating diffusion resistors () in which the diffusion resistor well is spaced from oppositely doped wells to mitigate diffusion resistor well depletion under high biasing so as to provide reduced voltage coefficient of resistivity and increased breakdown voltage for high-voltage applications.