The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Jul. 18, 2002
Applicant:
Inventors:
Donald S. Miles, Plano, TX (US);
Douglas T. Grider, McKinney, TX (US);
P. R. Chidambaram, Richardson, TX (US);
Amitabh Jain, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
An improved source/drain extension process is provided by the following processing steps of implanting NMOS devices directly on either side of the gates without an oxide layer (step D ), covering the gates with a cap oxide layer(step E ), covering NMOS devices with photoresist(step F ), dry etching all PMOS devices (Step G ), and implanting PMOS devices (step I ).