The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Apr. 26, 2007
Haowen Bu, Plano, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Douglas T. Grider, McKinney, TX (US);
Haowen Bu, Plano, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Douglas T. Grider, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Semiconductor devices () and fabrication methods () are provided, in which a nitride film () is formed over NMOS transistors to impart a tensile stress in ail or a portion of the NMOS transistor to improve carrier mobility. The nitride layer () is initially deposited over the transistors at low temperature with high hydrogen content to provide a moderate tensile stress in the semiconductor body prior to back-end processing. Subsequent back-end thermal processing reduces the film hydrogen content and causes an increase in the applied tensile stress.