The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Feb. 01, 2007
Haowen Bu, Plano, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Douglas T. Grider, McKinney, TX (US);
Haowen Bu, Plano, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Douglas T. Grider, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A silicon nitrate layer () is formed over a transistor gate () and source and drain regions (). The as-formed silicon nitride layer () comprises a first tensile stress and a high hydrogen concentration. The as-formed silicon nitride layer () is thermally annealed converting the first tensile stress into a second tensile stress that is larger than the first tensile stress. Following the thermal anneal, the hydrogen concentration in the silicon nitride layer () is greater than 12 atomic percent.