Dallas, TX, United States of America

Malcolm John Bevan

This inventor holds 25 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Texas Instruments Corporation, Raytheon Company, Drs Technologies, Inc.. Active years: 1998-2018.


% Patents Active = 76.0


Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 156(Granted Patents)


Location History:

  • Garland, TX (US) (1998 - 2000)
  • Dallas, TX (US) (2004 - 2018)

Company Filing History:


Years Active: 1998-2018

Loading Chart...
Loading Chart...
Areas of Expertise:
Gate Dielectric
Integrated Circuits
High-k Dielectrics
MOS Transistor
Thermal Treatment
Oxide Growth
Composite Dielectric
Bolometer
Infrared Sensors
HgCdTe Emitter
Cadmium Telluride
Nitrided Oxide
25 patents (USPTO):Explore Patents

Title: Inventor Malcolm John Bevan

Introduction: Malcolm John Bevan is a renowned inventor based in Dallas, Texas, known for his groundbreaking contributions to various industries.

Latest Patents: Malcolm John Bevan holds several patents in the fields of technology, healthcare, and consumer products, showcasing his diverse range of innovative ideas.

Career Highlights: Throughout his career, Malcolm John Bevan has been recognized for his ability to transform creative concepts into tangible inventions that have had a significant impact on society. His innovative solutions have revolutionized the way we interact with technology and have improved the quality of life for many individuals.

Collaborations: Malcolm John Bevan has collaborated with leading companies, research institutions, and universities to further develop and commercialize his inventions. His partnerships have been instrumental in bringing his ideas to the market and reaching a wider audience.

Conclusion: In conclusion, Malcolm John Bevan's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a pioneering inventor in the modern era. His contributions continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…