The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Aug. 05, 2014
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Hiroaki Niimi, Austin, TX (US);
Jarvis Benjamin Jacobs, Murphy, TX (US);
Ajith Varghese, McKinney, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01); H01L 21/324 (2006.01); H01L 21/265 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); H01L 21/26513 (2013.01); H01L 21/823462 (2013.01); H01L 29/105 (2013.01); H01L 21/265 (2013.01); H01L 21/823412 (2013.01); H01L 29/66477 (2013.01);
Abstract
A two-step thermal treatment method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is performed on the semiconductor device. A second thermal treatment procedure is consecutively performed on the semiconductor device to reduce damage produced by the ion implantation.