Enter inventor name

Ravindranath Droopad

This inventor holds 45 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Motorola Corporation, Freescale Semiconductor,inc., Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 1999-2016.

USPTO Granted Patents = 45

% Patents Active = 73.3

Average Co-Inventor Count = 3.3

ph-index = 17

Forward Citations = 1,634(Granted Patents)

Location History:

Tempe, AZ (US) (1999 - 2001)
Chandler, AZ (US) (2001 - 2014)
San Marcos, TX (US) (2016)

Company Filing History:

Freescale Semiconductor,inc.

patents

1 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 1999-2016

Loading Chart...

Areas of Expertise:

MOSFET Structures

Dielectric Interfaces

High-Frequency Devices

Compound Semiconductors

Epitaxial Growth

Ferromagnetic Semiconductors

Piezoelectric Structures

Integrated Circuits

Leakage Current Reduction

Oxide Interfaces

Acoustic Wave Devices

Microelectronic Structures

45 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9390913 - Semiconductor dielectric interface and gate stack (2016-07-12),

2. 8847280 - Insulated gate field effect transistors (2014-09-30),

3. 8105925 - Method for forming an insulated gate field effect device (2012-01-31),

4. 7799647 - MOSFET device featuring a superlattice barrier layer and method (2010-09-21),

5. 7692224 - MOSFET structure and method of manufacture (2010-04-06),

6. 7682912 - III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same (2010-03-23),

7. 7442654 - Method of forming an oxide layer on a compound semiconductor structure (2008-10-28),

8. 7169619 - Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process (2007-01-30),

9. 7105886 - High K dielectric film (2006-09-12),

10. 7105866 - Heterojunction tunneling diodes and process for fabricating same (2006-09-12),

11. 7067856 - Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same (2006-06-27),

12. 7045815 - Semiconductor structure exhibiting reduced leakage current and method of fabricating same (2006-05-16),

13. 7005717 - Semiconductor device and method (2006-02-28),

14. 6916717 - Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate (2005-07-12),

15. 6890816 - Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices (2005-05-10),

Title: The Innovative Journey of Inventor Ravindranath Droopad

Introduction:

Ravindranath Droopad, a prolific inventor based in Chandler, AZ (US), has made significant contributions to the field of semiconductor technology with a total of 38 patents to his name.

Latest Patents:

His most recent patents include advancements in insulated gate field effect transistors, where he has improved the performance of these devices by reducing surface states and gate dielectric traps. The use of gallium-oxide and gadolinium-gallium oxide in the dielectric layer, along with innovative sealing techniques, have led to enhanced device efficiency and minimized resistances.

Career Highlights:

Ravindranath Droopad has a rich professional background, having worked at renowned companies such as Motorola Corporation and Freescale Semiconductor, Inc. His expertise and dedication in the field of semiconductor technology have led to groundbreaking innovations that have influenced the industry.

Collaborations:

Throughout his career, Ravindranath Droopad has collaborated with esteemed colleagues such as Zhiyi Jimmy Yu and Jamal Ramdani. Together, they have worked on cutting-edge projects that have pushed the boundaries of semiconductor technology and paved the way for future advancements.

Conclusion:

In conclusion, Ravindranath Droopad's relentless pursuit of innovation and his remarkable contributions to the field of semiconductor technology have established him as a pioneering figure in the industry. His dedication to advancing insulated gate field effect transistors serves as a testament to his ingenuity and commitment to driving progress in the field of electronics.

Profile summary based on public USPTO records.

Please report any incorrect information to [email protected]