The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Aug. 05, 2004
Nada El-zein, Phoenix, AZ (US);
Jamal Ramdani, Gilbert, AZ (US);
Kurt Eisenbeiser, Tempe, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Nada El-Zein, Phoenix, AZ (US);
Jamal Ramdani, Gilbert, AZ (US);
Kurt Eisenbeiser, Tempe, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.