The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Sep. 28, 2007
Ravindranath Droopad, Chandler, AZ (US);
Matthias Passlack, Chandler, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Matthias Passlack, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of forming a portion () of a compound semiconductor MOSFET structure comprises forming a compound semiconductor layer structure () and an oxide layer () overlying the same. Forming the compound semiconductor structure () includes forming at least one channel material () and a group-III rich surface termination layer () overlying the at least one channel material. Forming the oxide layer () includes forming the oxide layer to overlie the group-III rich surface termination layer and comprises one of (a) depositing essentially congruently evaporating oxide of at least one of (a(i)) a ternary oxide and (a(ii)) an oxide more complex than a ternary oxide and (b) depositing oxide molecules, with use of at least one of (b(i)) a ternary oxide and (b(ii)) an oxide more complex than a ternary oxide.