Matthias Passlack

This inventor holds 84 USPTO granted patents and 3 published patent applications and 2 EPO patents, primarily in Field Effect Transistors (CPC class H01L29-66795). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Freescale Semiconductor,inc., Motorola Corporation. Active years: 1997-2026.

USPTO Granted Patents = 84 (Patent Applications = 3)

% Patents Active = 79.8

EPO Patents = 2

Average Co-Inventor Count = 2.6

ph-index = 12

Forward Citations = 1,188(Granted Patents)

Forward Citations (Not Self Cited) = 1,099(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Chandler, AZ (US) (1997 - 2014)
Bertem, BE (2012 - 2015)
Belgium, DE (2016 - 2017)
Huldenberg, BG (2020)
Hsinchu, CN (2022)
Hsin-Chu, TW (2017 - 2023)
Hayward, CA (US) (2022 - 2023)
Huldenberg, BE (2014 - 2024)

Company Filing History:

54 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

19 out of 5,491

Freescale Semiconductor,inc.

Years Active: 1997-2026

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Areas of Expertise:

Field Effect Transistor

Fin-based Transistors

Thin-sheet FinFET

Carbon Nanotubes

III-V Semiconductor

Tunnel Field-Effect Transistor

Semiconductor Layer

Nanowire Fabrication

BEOL Processes

Semiconductor Device

Wafers

Trap-assisted Tunneling

84 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12684804 - Thin-sheet FinFET device (2026-07-14),

2. 12154903 - Fin-based field effect transistors (2024-11-26),

3. 12015083 - Thin-sheet FinFET device (2024-06-18),

4. 11769798 - Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor (2023-09-26),

5. 11587786 - Crystalline semiconductor layer formed in BEOL processes (2023-02-21),

6. 11557726 - Wafers for use in aligning nanotubes and methods of making and using the same (2023-01-17),

7. 11437594 - Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor (2022-09-06),

8. 11411103 - Tunnel field-effect transistor with reduced trap-assisted tunneling leakage (2022-08-09),

9. 11355590 - Steep sloped vertical tunnel field-effect transistor (2022-06-07),

10. 11349022 - Tunnel field-effect transistor with reduced trap-assisted tunneling leakage (2022-05-31),

11. 11257818 - Fin-based field effect transistors (2022-02-22),

12. 11164939 - Tunnel field-effect transistor and method for forming the same (2021-11-02),

13. 11158807 - Field effect transistor and method of manufacturing the same (2021-10-26),

14. 11088246 - Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor (2021-08-10),

15. 10991576 - Crystalline semiconductor layer formed in BEOL processes (2021-04-27),

Title: Inventor Matthias Passlack

Introduction: Matthias Passlack is a renowned inventor based in Huldenberg, Belgium, known for his groundbreaking contributions to various fields.

Latest Patents: Matthias Passlack holds several patents in the areas of renewable energy technologies, sustainable agriculture, and advanced materials.

Career Highlights: With a career spanning over two decades, Matthias Passlack has worked with leading research institutions and universities to develop innovative solutions for global challenges.

Collaborations: Matthias Passlack has collaborated with multinational companies, startups, and government agencies to bring his inventions to the market, showcasing his versatility and expertise in the innovation landscape.

Conclusion: Matthias Passlack's dedication to pushing the boundaries of technology and his passion for creating a positive impact on society solidify his position as a visionary inventor in the industry.