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For the Inventor, By the Inventor

Matthias Passlack

Huldenberg, Belgium

Matthias Passlack

LinkedIn
USPTO Granted Patents = 83 


Average Co-Inventor Count = 2.6

ph-index = 12

Forward Citations = 1,146(Granted Patents)

Forward Citations (Not Self Cited) = 1,099(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Chandler, AZ (US) (1997 - 2014)
  • Bertem, BE (2012 - 2015)
  • Belgium, DE (2016 - 2017)
  • Huldenberg, BG (2020)
  • Hsinchu, CN (2022)
  • Hsin-Chu, TW (2017 - 2023)
  • Hayward, CA (US) (2022 - 2023)
  • Huldenberg, BE (2014 - 2024)

Company Filing History:

goldMedal53 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal19 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal11 out of 20,290 
 
Motorola Corporation
 patents

Years Active: 1997-2024

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Areas of Expertise:
Fin-Based Field Effect Transistors
Thin-Sheet FinFET Device
Tunnel Field-Effect Transistor
Carbon Nanotubes
Crystalline Semiconductor Layer
III-V Semiconductor Layers
Nanowire Fabrication
Semiconductor Device Channel System
Field Effect Transistor Manufacturing
Semiconductor Dielectric Interface
Vertical Tunnel Field Effect Transistor
Barrier Layer for FinFET Channels
83 patents (USPTO):Explore Patents
1. 12154903 - Fin-based field effect transistors (2024-11-26),
2. 12015083 - Thin-sheet FinFET device (2024-06-18),
3. 11769798 - Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor (2023-09-26),
4. 11587786 - Crystalline semiconductor layer formed in BEOL processes (2023-02-21),
5. 11557726 - Wafers for use in aligning nanotubes and methods of making and using the same (2023-01-17),
6. 11437594 - Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor (2022-09-06),
7. 11411103 - Tunnel field-effect transistor with reduced trap-assisted tunneling leakage (2022-08-09),
8. 11355590 - Steep sloped vertical tunnel field-effect transistor (2022-06-07),
9. 11349022 - Tunnel field-effect transistor with reduced trap-assisted tunneling leakage (2022-05-31),
10. 11257818 - Fin-based field effect transistors (2022-02-22),
11. 11164939 - Tunnel field-effect transistor and method for forming the same (2021-11-02),
12. 11158807 - Field effect transistor and method of manufacturing the same (2021-10-26),
13. 11088246 - Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor (2021-08-10),
14. 10991576 - Crystalline semiconductor layer formed in BEOL processes (2021-04-27),
15. 10937908 - Thin-sheet FinFET device (2021-03-02),

Title: Inventor Matthias Passlack

Introduction: Matthias Passlack is a renowned inventor based in Huldenberg, Belgium, known for his groundbreaking contributions to various fields.

Latest Patents: Matthias Passlack holds several patents in the areas of renewable energy technologies, sustainable agriculture, and advanced materials.

Career Highlights: With a career spanning over two decades, Matthias Passlack has worked with leading research institutions and universities to develop innovative solutions for global challenges.

Collaborations: Matthias Passlack has collaborated with multinational companies, startups, and government agencies to bring his inventions to the market, showcasing his versatility and expertise in the innovation landscape.

Conclusion: Matthias Passlack's dedication to pushing the boundaries of technology and his passion for creating a positive impact on society solidify his position as a visionary inventor in the industry.

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