The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Jun. 27, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
H01L 29/045 (2013.01); H01L 21/0243 (2013.01); H01L 21/02433 (2013.01); H01L 21/02609 (2013.01); H01L 29/7851 (2013.01);
Abstract
A device includes a first epitaxial layer, a second epitaxial layer, an interlayer, a gate dielectric layer, and a gate layer. The interlayer is between the first epitaxial layer and the second epitaxial layer. The gate dielectric layer is around the interlayer. The gate layer is around the gate dielectric layer and the interlayer. The interlayer is slanted with respect to a sidewall of the gate layer.