The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Apr. 07, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Matthias Passlack, Hsinchu, TW;
Blandine Duriez, Hsinchu, TW;
Georgios Vellianitis, Hsinchu, TW;
Gerben Doornbos, Hsinchu, TW;
Marcus Johannes Henricus Van Dal, Hsinchu, TW;
Martin Christopher Holland, Hsinchu, TW;
Mauricio Manfrini, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02645 (2013.01); H01L 21/02675 (2013.01); H01L 29/66757 (2013.01); H01L 29/78603 (2013.01); H01L 29/78618 (2013.01); H01L 29/78648 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01);
Abstract
A crystalline channel layer of a semiconductor material is formed in a backend process over a crystalline dielectric seed layer. A crystalline magnesium oxide MgO is formed over an amorphous inter-layer dielectric layer. The crystalline MgO provides physical link to the formation of a crystalline semiconductor layer thereover.