The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Oct. 18, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Timothy Vasen, Tervuren, BE;
Chao-Ching Cheng, Hsinchu, TW;
Matthias Passlack, Huldenberg, BE;
Martin Christopher Holland, Bertem, BE;
Tse-An Chen, Taoyuan, TW;
Lain-Jong Li, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A field effect transistor includes a semiconductor substrate, a first pad layer, carbon nanotubes and a gate structure. The first pad layer is disposed over the semiconductor substrate and comprises a 2D material. The carbon nanotubes are disposed over the first insulating pad layer. The gate structure is disposed over the semiconductor substrate and is vertically stacked with the carbon nanotubes. The carbon nanotubes extend from one side to an opposite side of the gate structure.