The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2022
Filed:
Mar. 31, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Peter Ramvall, Lund, SE;
Matthias Passlack, Huldenberg, BE;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/12 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
H01L 29/122 (2013.01); H01L 21/02389 (2013.01); H01L 29/152 (2013.01); H01L 29/2003 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
The current disclosure describes a vertical tunnel FET device including a vertical P-I-N heterojunction structure of a P-doped nanowire gallium nitride source/drain, an intrinsic InN layer, and an N-doped nanowire gallium nitride source/drain. A high-K dielectric layer and a metal gate wrap around the intrinsic InN layer.