The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jun. 17, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Mark Van Dal, Linden, BE;

Martin Christopher Holland, Bertem, BE;

Matthias Passlack, Huldenberg, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/62 (2025.01); H10B 12/00 (2023.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/80 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/62 (2025.01); H10B 12/36 (2023.02); H10D 30/024 (2025.01); H10D 30/751 (2025.01); H10D 62/121 (2025.01); H10D 62/882 (2025.01); H10D 84/853 (2025.01);
Abstract

A semiconductor device includes a fin protruding upwardly from a substrate. The fin includes a first sidewall and an opposing second sidewall and a top surface extending between the first and second sidewalls. The semiconductor device also includes a two-dimensional material layer disposed on the first and second sidewalls of the fin without being disposed on the top surface of the fin, and a gate stack disposed on the fin. The gate stack contacts a channel region defined in the two-dimensional material layer. The two-dimensional material layer includes a flat portion extending laterally away from the fin.


Find Patent Forward Citations

Loading…