The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Nov. 19, 2002
Yong Liang, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Xiaoming HU, Chandler, AZ (US);
Jun Wang, Gilbert, AZ (US);
Yi Wei, Chandler, AZ (US);
Zhiyi Yu, Gilbert, AZ (US);
Yong Liang, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Xiaoming Hu, Chandler, AZ (US);
Jun Wang, Gilbert, AZ (US);
Yi Wei, Chandler, AZ (US);
Zhiyi Yu, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
High quality epitaxial layers of monocrystalline oxide materials () can be grown overlying monocrystalline substrates () such as large silicon wafers. The monocrystalline oxide layer () comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer () of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.