The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Feb. 07, 2003
Yong Liang, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Yong Liang, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
High quality epitaxial layers of monocrystalline perovskite materials () can be grown overlying monocrystalline substrates () such as gallium arsenide wafers by forming a metal template layer () on the monocrystalline substrate. The structure includes a metal-containing layer () to mitigate unwanted oxidation of underlying layers and a low-temperature seed layer () that prevents degradation of an epitaxial layer () during growth of the perovskite layer ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile