The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
May. 14, 2004
Applicants:
Kurt Eisenbeiser, Tempe, AZ (US);
Jun Wang, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Inventors:
Kurt Eisenbeiser, Tempe, AZ (US);
Jun Wang, Gilbert, AZ (US);
Ravindranath Droopad, Chandler, AZ (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
Circuit () has a dual layer gate dielectric () formed over a semiconductor substrate (). The gate dielectric includes an amorphous layer () and a monocrystalline layer (). The monocrystalline layer typically has a higher dielectric constant than the amorphous layer.