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For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Ravi Mahendra Todi

This inventor holds 53 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Qualcomm Incorporated. Active years: 2010-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ravi Mahendra Todi. Retrieved from https://idiyas.com/inventor/ravi-mahendra-todi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 53 

% Patents Active = 47.2

Average Co-Inventor Count = 5.3

ph-index = 5

Forward Citations = 113(Granted Patents)

Forward Citations (Not Self Cited) = 106(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Wappingers Falls, NY (US) (2012)
  • Hopewell Junction, NY (US) (2012 - 2014)
  • Coste Jardin Del Mar, CA (US) (2014)
  • Poughkeepsie, NY (US) (2010 - 2016)
  • San Diego, CA (US) (2014 - 2020)

Company Filing History:

goldMedal47 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal5 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 44,897 
 
Qualcomm Incorporated
 patents

Years Active: 2010-2020

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Areas of Expertise:
Metal Trench Capacitor
Sublithographic Width FinFET
Embedded DRAM
High Density Memory Cells
SOI Substrate
MIM Capacitor
Deep Trench Capacitor
Lateral Epitaxy
Device Isolation
Epitaxy
Self-Aligned Devices
Rare-Earth Oxide
53 patents (USPTO):Explore Patents
1. 10818668 - Metal trench capacitor and improved isolation and methods of manufacture (2020-10-27),
2. 9899391 - Metal trench capacitor and improved isolation and methods of manufacture (2018-02-20),
3. 9583497 - Metal trench capacitor and improved isolation and methods of manufacture (2017-02-28),
4. 9478600 - Method of forming substrate contact for semiconductor on insulator (SOI) substrate (2016-10-25),
5. 9461042 - Sublithographic width finFET employing solid phase epitaxy (2016-10-04),
6. 9412640 - Semiconductor device including substrate contact and related method (2016-08-09),
7. 9397152 - Multilayer MIM capacitor (2016-07-19),
8. 9379177 - Deep trench capacitor (2016-06-28),
9. 9293520 - Method of forming substrate contact for semiconductor on insulator (SOI) substrate (2016-03-22),
10. 9287272 - Metal trench capacitor and improved isolation and methods of manufacture (2016-03-15),
11. 9257433 - Structure and method of forming enhanced array device isolation for implanted plate EDRAM (2016-02-09),
12. 9245971 - Semiconductor device having high mobility channel (2016-01-26),
13. 9224801 - Multilayer MIM capacitor (2015-12-29),
14. 9159578 - Self-aligned devices and methods of manufacture (2015-10-13),
15. 9087928 - High density memory cells using lateral epitaxy (2015-07-21),

Title: The Innovator Extraordinaire: Ravi Mahendra Todi

Introduction:

Ravi Mahendra Todi, a distinguished inventor based in Poughkeepsie, NY, is a name that resonates within the realm of cutting-edge inventions. With an impressive portfolio boasting 53 patents, Todi has established himself as a trailblazer in the field of innovation, continuously pushing the boundaries of what is achievable.

Latest Patents:

Among his recent groundbreaking patents is the "Metal trench capacitor and improved isolation and methods of manufacture." This patent introduces a high-k dielectric metal trench capacitor and innovative methods for its manufacturing. The process entails forming deep trenches in a substrate, filling them with sacrificial fill material and poly material, integrating CMOS processes, and culminating in the creation of a capacitor plate lined with high-k dielectric material.

Career Highlights:

Todi's professional journey has seen him making significant contributions to renowned companies such as IBM and Globalfoundries Inc. His expertise and ingenuity have been pivotal in driving forward technological advancements within these organizations, solidifying his position as a luminary in the industry.

Collaborations:

Throughout his career, Todi has collaborated with esteemed individuals in the field, including Geng Wang and Kangguo Cheng. These partnerships have been instrumental in fostering a culture of innovation and knowledge-sharing, leading to the development of pioneering solutions.

Conclusion:

In conclusion, Ravi Mahendra Todi stands as a beacon of innovation and excellence, with a remarkable track record of patents and a relentless commitment to advancing the boundaries of possibility. His dedication to pioneering new technologies underscores his status as a true trailblazer in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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