The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Sep. 27, 2013
Qualcomm Incorporated, San Diego, CA (US);
Bin Yang, San Diego, CA (US);
P R Chidambaram, San Diego, CA (US);
John Jianhong Zhu, San Diego, CA (US);
Jihong Choi, San Diego, CA (US);
Da Yang, San Diego, CA (US);
Ravi Mahendra Todi, San Diego, CA (US);
Giridhar Nallapati, San Diego, CA (US);
Chock Hing Gan, San Diego, CA (US);
Ming Cai, San Diego, CA (US);
Samit Sengupta, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile