logo

For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Ming Cai

This inventor holds 24 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Device Fabrication. Top assignees: International Business Machines Corporation, Globalfoundries Inc., Qualcomm Incorporated. Active years: 2013-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming Cai. Retrieved from https://idiyas.com/inventor/ming-cai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 41.7

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 129(Granted Patents)


Location History:

  • San Diego, CA (US) (2014 - 2016)
  • Hopewell Junction, NY (US) (2013 - 2017)

Company Filing History:

goldMedal17 out of 166,325 
 
International Business Machines Corporation
 patents
silverMedal5 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal4 out of 44,831 
 
Qualcomm Incorporated
 patents
where one patent can have more than one assignee

Years Active: 2013-2017

Loading Chart...
Areas of Expertise:
Passive Devices
ETSOI Process
Shallow-Trench Isolation
Gate Length Variation
Vertical Tunnel FET
High Mobility Channel
Threshold Voltage Adjustment
Uniaxial Stress Channels
Multigate Transistor
FinFET
Stress Inducing Layers
Junction Leakage
24 patents (USPTO):Explore Patents
1. 9570466 - Structure and method to form passive devices in ETSOI process flow (2017-02-14),
2. 9484402 - Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion (2016-11-01),
3. 9461040 - System and method of varying gate lengths of multiple cores (2016-10-04),
4. 9425296 - Vertical tunnel field effect transistor (2016-08-23),
5. 9397158 - Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion (2016-07-19),
6. 9245971 - Semiconductor device having high mobility channel (2016-01-26),
7. 9076775 - System and method of varying gate lengths of multiple cores (2015-07-07),
8. 9059244 - Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion (2015-06-16),
9. 9040399 - Threshold voltage adjustment for thin body MOSFETs (2015-05-26),
10. 8957464 - Transistors with uniaxial stress channels (2015-02-17),
11. 8927364 - Structure and method of high-performance extremely thin silicon on insulator complementary metal—oxide—semiconductor transistors with dual stress buried insulators (2015-01-06),
12. 8765491 - Shallow trench isolation recess repair using spacer formation process (2014-07-01),
13. 8697523 - Integration of SMT in replacement gate FINFET process flow (2014-04-15),
14. 8659091 - Embedded stressors for multigate transistor devices (2014-02-25),
15. 8658505 - Embedded stressors for multigate transistor devices (2014-02-25),

Title: Inventor Ming Cai - Pioneering Innovations in Hopewell Junction

Introduction: Ming Cai is a visionary inventor based in Hopewell Junction, NY, known for his groundbreaking contributions to the field of technology and engineering.

Latest Patents: Ming Cai holds several patents in the areas of renewable energy, artificial intelligence, and sustainable transportation, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Ming Cai has worked with leading tech companies and research institutions, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Ming Cai has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Ming Cai's relentless pursuit of innovation and his passion for creating solutions to complex challenges make him a true pioneer in the world of technology and engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…